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| MITSUBISHI SEMICONDUCTOR M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6 OUTPUT FEATURES q Medium breakdown voltage (BVCEO 30V) q Output sink current (IC(max) = 30mA) q Driving available with MOS (PMOS, CMOS) IC output q Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA) q Wide operating temperature range (Ta = -20 to +75C) IN7 7 GND 8 VCC Package type 16P4(P) CIRCUIT DIAGRAM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) 10k VCC 23k INPUT OUTPUT 100k 22k GND FUNCTION The M54577P has seven circuits consisting of NPN transistor. This IC uses a predriver stage with a diode and 23k resistor in series to input. The output transistor emitters are all connected to the GND pin (pin 8), and VCC is connected to pin 9. The collector current are capable of sinking 30mA maximum. Collector-emitter supply voltage is 30V maximum. Collector-emitter saturation voltage is below 0.35V (IC = 20mA) Drives active "H" input. The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings 13 -0.5 ~ +30 30 -20 ~ VCC 1.47 -20 ~ +75 -55 ~ +125 Unit V V mA V W C C Jan.2000 MITSUBISHI SEMICONDUCTOR M54577P 7-UNIT 300mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC IC VIH VIL Parameter Supply voltage Collector current (Current per 1 circuit) "H" input voltage "L" input voltage (Unless otherwise noted, Ta = -20 ~ +75C) Limits min 4.5 0 3 0 typ 5 10 -- -- max 13 20 VCC 1 Unit V mA V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) II ICC hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 30 -- -- 30 -- -- 500 typ* -- -- -- -- 0.4 1.3 1200 max -- 0.25 0.35 90 0.9 2.3 -- Unit V V A mA -- ICEO = 100A VCC = 4.5V, VI = 3V, IC = 10mA Collector-emitter saturation voltage VCC = 6V, VI = 3V, IC = 20mA Input current VCC = 4.5V, VI = 3V VCC = 4.5V, VI = 3V Supply current VCC = 13V, VI = 3V (Only one time operation) VCE = 4V, VCC = 4.5V, IC = 20mA, Ta = 25C DC amplification factor * : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 210 3200 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM INPUT VCC Vo 50% INPUT 50% Measured device PG 50 RL OUTPUT OUTPUT 50% 50% CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VP = 3VP-P (2)Input-output conditions : RL = 500, Vo = 10V, VCC = 6V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan.2000 MITSUBISHI SEMICONDUCTOR M54577P 7-UNIT 300mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS DC Amplification Factor Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 DC amplification factor hFE 104 7 5 3 Power dissipation Pd (W) 1.5 VCC = 4.5V VCE = 4V Ta = 75C Ta = 75C Ta = 25C Ta = 25C Ta = -20C Ta = -20C 1.0 103 7 5 3 0.5 0 0 25 50 75 100 102 0 10 3 5 7 101 3 5 7 102 Ambient temperature Ta (C) Output Saturation Voltage Collector Current Characteristics 40 Collector current Ic (mA) Grounded Emitter Transfer Characteristics 40 Collector current Ic (mA) Collector current Ic (mA) 30 30 VCC = 4.5V VCE = 4V Ta = 75C Ta = 75C Ta = 25C Ta = 25C Ta = -20C Ta = -20C 20 20 10 VI = 3.0V VCC = 4.5V Ta = 75C Ta = 75C Ta = 25C Ta = 25C Ta = -20C Ta = -20C 10 0 0 0.02 0.04 0.06 0.08 0 0 1 2 3 4 Output saturation voltage VCE(sat) (V) Input voltage VI (V) Jan.2000 |
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